Multiple makers of enthusiast-grade DRAM modules showcased CAMM2 memory at Computex 2025, but there are doubts about its adoption due to uncertain motherboard support and trade-offs compared to traditional DIMMs.
Samsung plans to adopt hybrid bonding for HBM4 to improve thermal and interface performance, potentially gaining a competitive edge over SK hynix, which may delay its use due to costs concerns.
NEO Semiconductor has announced progress on its new 3D X-DRAM technology, with new 1T1C and 3T0C chip designs increasing DRAM speeds by an order of magnitude for tomorrow’s top-end computing.
G.Skill has introduced a pair of new memory modules, one boasting 6800MHz speeds at up to 96GB of capacity. The other is targeted at low-latency featuring 6400MHz speeds and a CL timing of 28.
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