G.Skill broke DDR5-10000 with a CAMM2 memory module attached to a custom Asus motherboard, showing off its potential for high-performance applications.
Micron has begun sampling LPDDR5X chips made with its new 1γ process that relies on EUV patterning, marking a major technology transition that improves performance, power efficiency, and bit density across its DRAM portfolio.
As tariffs rise and production falls, DDR4 has soared to become over twice as expensive as DDR5. This is the first time in DRAM history that a previous generation of DRAM has become this much more expensive than its current-gen replacement.
Multiple makers of enthusiast-grade DRAM modules showcased CAMM2 memory at Computex 2025, but there are doubts about its adoption due to uncertain motherboard support and trade-offs compared to traditional DIMMs.
Samsung plans to adopt hybrid bonding for HBM4 to improve thermal and interface performance, potentially gaining a competitive edge over SK hynix, which may delay its use due to costs concerns.
NEO Semiconductor has announced progress on its new 3D X-DRAM technology, with new 1T1C and 3T0C chip designs increasing DRAM speeds by an order of magnitude for tomorrow’s top-end computing.
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