Major DRAM makers are phasing out DDR4 production from late 2025, as they shift to DDR5, but supply will remain available for niche applications for years to come.
CXMT has reportedly delayed DDR5 mass production to late 2025 to improve quality and yields, but its growing capabilities and state backing are starting to worry global DRAM rivals despite ongoing tool access challenges.
Overclocker bl4ckdot set a new DDR5 world record, pushing G.Skill’s Trident Z5 to an incredible 12,872 MT/s using LN2 cooling. The run was validated on CPU-Z, placing him at the top of HWBOT’s Memory Frequency Hall of Fame once again.
DRAM prices are set to rise sharply in Q3 2025, with legacy memory types like DDR4, LPDDR4X, and GDDR6 seeing the steepest increases of up to 45% due to supply cuts and phase-outs. The effect of U.S. tariffs on memory imports from Japan and South Korea is still to be determined, but it will likely be drastic.
G.Skill broke DDR5-10000 with a CAMM2 memory module attached to a custom Asus motherboard, showing off its potential for high-performance applications.
Micron has begun sampling LPDDR5X chips made with its new 1γ process that relies on EUV patterning, marking a major technology transition that improves performance, power efficiency, and bit density across its DRAM portfolio.
As tariffs rise and production falls, DDR4 has soared to become over twice as expensive as DDR5. This is the first time in DRAM history that a previous generation of DRAM has become this much more expensive than its current-gen replacement.
Multiple makers of enthusiast-grade DRAM modules showcased CAMM2 memory at Computex 2025, but there are doubts about its adoption due to uncertain motherboard support and trade-offs compared to traditional DIMMs.
Samsung plans to adopt hybrid bonding for HBM4 to improve thermal and interface performance, potentially gaining a competitive edge over SK hynix, which may delay its use due to costs concerns.
NEO Semiconductor has announced progress on its new 3D X-DRAM technology, with new 1T1C and 3T0C chip designs increasing DRAM speeds by an order of magnitude for tomorrow’s top-end computing.
G.Skill has introduced a pair of new memory modules, one boasting 6800MHz speeds at up to 96GB of capacity. The other is targeted at low-latency featuring 6400MHz speeds and a CL timing of 28.
The company has plans to demo its next-gen 16-layer HBM3E prototype alongside a high-capacity enterprise SSD, and new solutions to improve AI performance
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